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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ673
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SJ673 is P-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
? Super low on-state resistance
R DS(on)1 = 20 m ? MAX. (V GS = ? 10 V, I D = ? 18 A)
R DS(on)2 = 31 m ? MAX. (V GS = ? 4.0 V, I D = ? 18 A)
? Low C iss : C iss = 4600 pF TYP.
? Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
PART NUMBER
2SJ673
PACKAGE
Isolated TO-220 (MP-45F)
(Isolated TO-220)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25°C)
V DSS
V GSS
I D(DC)
? 60
m 20
m 36
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
m 144
A
Total Power Dissipation (T C = 25°C)
Total Power Dissipation (T A = 25°C)
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
32
2.0
150
? 55 to +150
W
W
°C
°C
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I AS
E AS
? 36
130
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25°C, V DD = ? 30 V, R G = 25 ? , V GS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17210EJ1V0DS00 (1st edition)
Date Published June 2004 NS CP(K)
Printed in Japan
2004
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